2SK2979 Todos los transistores

 

2SK2979 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2979
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: UPAK

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2SK2979 Datasheet (PDF)

 8.1. Size:164K  toshiba
2sk2972.pdf

2SK2979
2SK2979

 8.2. Size:108K  sanyo
2sk2976.pdf

2SK2979
2SK2979

Ordering number:ENN6003N-Channel Silicon MOSFET2SK2976DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2083B[2SK2976]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2976]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0.22 :

 8.3. Size:42K  sanyo
2sk2977 2sk2977ls.pdf

2SK2979
2SK2979

Ordering number:ENN6423N-Channel Silicon MOSFET2SK2977LSDC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2078B[2SK2977LS]4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO220FI-LSSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

 8.4. Size:45K  hitachi
2sk2978.pdf

2SK2979
2SK2979

2SK2978Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-659B (Z)3rd. EditionJun 1998Features Low on-resistanceRDS(on) = 0.09 typ. (VGS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices.OutlineUPAK123D4G1. Gate2. Drain3. Source4. DrainS2SK2978Absolute Maximum Ratings (Ta = 25 C)Item

 8.5. Size:279K  inchange semiconductor
2sk2977ls.pdf

2SK2979
2SK2979

isc N-Channel MOSFET Transistor 2SK2977LSFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... 2SK2939 , 2SK2940 , 2SK2955 , 2SK2956 , 2SK2957 , 2SK2958 , 2SK2959 , 2SK2978 , 8N60 , 2SK2980 , 2SK3000 , 2SK3069 , 2SK3070 , 2SK3080 , 2SK3081 , 2SK3082 , 2SK3133 .

 

 
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