NCEAP40T11AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP40T11AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 850 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de NCEAP40T11AK MOSFET
NCEAP40T11AK Datasheet (PDF)
nceap40t11ak.pdf

NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t11ag.pdf

http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t11g.pdf

http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m
nceap40t11k.pdf

NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq
Otros transistores... NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D , NCEAP40PT15G , NCEAP40T11AG , IRF3205 , NCEAP40T11G , NCEAP40T11K , NCEAP40T13AGU , NCEAP40T14AK , NCEAP40T14G , NCEAP40T15AGU , NCEAP40T15GU , NCEAP40T17AD .
History: 13N50L-T2Q-T | AOT780A70L
History: 13N50L-T2Q-T | AOT780A70L



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