NCEAP40T13AGU Todos los transistores

 ..1. Size:615K  ncepower
 nceap40t13agu.pdf

http //www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excel

 5.1. Size:566K  ncepower
 nceap40t14ak.pdf

NCEAP40T14AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T14AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq

 5.2. Size:829K  ncepower
 nceap40t15agu.pdf

 5.3. Size:897K  ncepower
 nceap40t11ak.pdf

NCEAP40T11AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq

 5.4. Size:762K  ncepower
 nceap40t15gu.pdf

http //www.ncepower.com NCEAP40T15GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited) DS D optimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10V DS(ON) GS performance. Both conduction and switching power losses are R =

 5.5. Size:543K  ncepower
 nceap40t11g.pdf

 5.6. Size:637K  ncepower
 nceap40t11k.pdf

NCEAP40T11K http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This DS(ON) g device is ideal for high-freq

 5.7. Size:918K  ncepower
 nceap40t11ag.pdf

http //www.ncepower.com NCEAP40T11AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell

 5.8. Size:640K  ncepower
 nceap40t17ad.pdf

http //www.ncepower.com NCEAP40T17AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellen

 5.9. Size:711K  ncepower
 nceap40t17ag.pdf

NCEAP40T17AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell

 5.10. Size:769K  ncepower
 nceap40t14g.pdf

http //www.ncepower.com NCEAP40T14G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T14G uses Super Trench technology that is V =40V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5V DS(