NCEAP40T35AVD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP40T35AVD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 380 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 350 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 156.5 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 4641 pF
Resistencia entre drenaje y fuente RDS(on): 0.00088 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET NCEAP40T35AVD
NCEAP40T35AVD Datasheet (PDF)
nceap40t35avd.pdf
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http://www.ncepower.comNCEAP40T35AVDNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.68m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap40t35all.pdf
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http://www.ncepower.comNCEAP40T35ALLNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.63m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
nceap40t20all.pdf
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http://www.ncepower.comNCEAP40T20ALLNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exce
nceap40t13agu.pdf
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http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel
nceap40t14ak.pdf
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NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t15agu.pdf
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NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses
nceap40t11ak.pdf
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NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t15gu.pdf
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http://www.ncepower.com NCEAP40T15GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited)DS Doptimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10VDS(ON) GSperformance. Both conduction and switching power losses are R =
nceap40t20agu.pdf
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http://www.ncepower.comNCEAP40T20AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.95m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
nceap40t11g.pdf
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http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m
nceap40t11k.pdf
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NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq
nceap40t11ag.pdf
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http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t17ad.pdf
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http://www.ncepower.com NCEAP40T17ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellen
nceap40t20ad.pdf
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http://www.ncepower.comNCEAP40T20ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excelle
nceap40t17ag.pdf
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NCEAP40T17AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t14g.pdf
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http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
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