NCEAP40T35AVD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEAP40T35AVD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 380 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 350 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 156.5 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 4641 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00088 Ohm
   Paquete / Cubierta: TO-263

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NCEAP40T35AVD Datasheet (PDF)

..1. Size:871K ncepower
nceap40t35avd.pdf

http://www.ncepower.comNCEAP40T35AVDNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.68m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

3.1. Size:655K ncepower
nceap40t35all.pdf

http://www.ncepower.comNCEAP40T35ALLNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.63m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc

6.1. Size:932K ncepower
nceap40t20all.pdf

http://www.ncepower.comNCEAP40T20ALLNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exce

6.2. Size:615K ncepower
nceap40t13agu.pdf

http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel

6.3. Size:566K ncepower
nceap40t14ak.pdf

NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq

6.4. Size:829K ncepower
nceap40t15agu.pdf

NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses

6.5. Size:897K ncepower
nceap40t11ak.pdf

NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq

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nceap40t15gu.pdf

http://www.ncepower.com NCEAP40T15GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited)DS Doptimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10VDS(ON) GSperformance. Both conduction and switching power losses are R =

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nceap40t20agu.pdf

http://www.ncepower.comNCEAP40T20AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.95m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc

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nceap40t11g.pdf

http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m

6.9. Size:637K ncepower
nceap40t11k.pdf

NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq

6.10. Size:918K ncepower
nceap40t11ag.pdf

http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell

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nceap40t17ad.pdf

http://www.ncepower.com NCEAP40T17ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellen

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nceap40t20ad.pdf

http://www.ncepower.comNCEAP40T20ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excelle

6.13. Size:711K ncepower
nceap40t17ag.pdf

NCEAP40T17AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell

6.14. Size:769K ncepower
nceap40t14g.pdf

http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(

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