NCEAP6090AGU MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCEAP6090AGU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEAP6090AGU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: DFN5X6-8L

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NCEAP6090AGU datasheet

..1. Size:395K ncepower
nceap6090agu.pdf pdf_icon

NCEAP6090AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6090AGU uses Super Trench technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =3.5m (typical) @ V =

7.1. Size:713K ncepower
nceap60t15g.pdf pdf_icon

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

7.2. Size:759K ncepower
nceap6055agu.pdf pdf_icon

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

7.3. Size:723K ncepower
nceap60t20d.pdf pdf_icon

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c

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