NCEAP60T20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP60T20D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 255 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 250 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 130 nC
Tiempo de subida (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 1900 pF
Resistencia entre drenaje y fuente RDS(on): 0.0022 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET NCEAP60T20D
NCEAP60T20D Datasheet (PDF)
nceap60t20d.pdf
http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c
nceap60t15g.pdf
http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R
nceap60t12ak.pdf
NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R
nceap60t12ad.pdf
NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R
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