NCEP0109AR Todos los transistores

 ..1. Size:300K  ncepower
 ncep0109ar.pdf

http //www.ncepower.com NCEP0109AR NCE N-Channel Super Trench Power MOSFET Description The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.1. Size:642K  ncepower
 ncep0107r.pdf

http //www.ncepower.com NCEP0107R NCE N-Channel Super Trench Power MOSFET Description The NCEP0107R uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switchin

 7.2. Size:296K  ncepower
 ncep0107ar.pdf

http //www.ncepower.com NCEP0107AR NCE N-Channel Super Trench Power MOSFET Description The NCEP0107AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.1. Size:316K  ncepower
 ncep0178d.pdf

Pb Free Product http //www.ncepower.com NCEP0178D NCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.2. Size:1129K  ncepower
 ncep018n60agu.pdf

NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi

 8.3. Size:390K  ncepower
 ncep0160ag.pdf

http //www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.4. Size:348K  ncepower
 ncep01t13.pdf

Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.5. Size:283K  ncepower
 ncep01t11d.pdf

Pb Free Product http //www.ncepower.com NCEP01T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.6. Size:419K  ncepower
 ncep0140ag.pdf

Pb Free Product http //www.ncepower.com NCEP0140AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0140AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.7. Size:396K  ncepower
 ncep0135a.pdf

Pb Free Product http //www.ncepower.com NCEP0135A NCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.8. Size:321K  ncepower
 ncep01t13ad.pdf

Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.9. Size:318K  ncepower
 ncep0178f.pdf

Pb Free Product http //www.ncepower.com NCEP0178F NCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.10. Size:340K  ncepower
 ncep01t10g.pdf

http //www.ncepower.com NCEP01T10G NCE N-Channel Super Trench Power MOSFET Description The NCEP01T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.11. Size:323K  ncepower
 ncep01t18d.pdf

Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.12. Size:407K  ncepower
 ncep018n85ll.pdf

NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina

 8.13. Size:428K  ncepower
 ncep0160a.pdf

Pb Free Product http //www.ncepower.com NCEP0160A NCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 8.14. Size:317K  ncepower
 ncep01t11.pdf

Pb Free Product http //www.ncepower.com NCEP01T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.15. Size:360K  ncepower
 ncep0190g.pdf

Pb Free Product http //www.ncepower.com NCEP0190G NCE N-Channel Super Trench Power MOSFET Description The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.16. Size:406K  ncepower
 ncep01t25t.pdf

http //www.ncepower.com NCEP01T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.17. Size:347K  ncepower
 ncep015n30gu.pdf

http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @

 8.18. Size:343K  ncepower
 ncep01t13a.pdf

Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.19. Size:346K  ncepower
 ncep01t25ll.pdf

http //www.ncepower.com NCEP01T25LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l

 8.20. Size:653K  ncepower
 ncep01p35a.pdf

Pb Free Product http //www.ncepower.com NCEP01P35A NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-

 8.21. Size:803K  ncepower
 ncep016n10ll.pdf

Pb Free Product NCEP016N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =385A DS D switching performance. Both conduction and switching power R =1.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

 8.22. Size:325K  ncepower
 ncep01t12d.pdf

http //www.ncepower.com NCEP01T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.23. Size:687K  ncepower
 ncep013nh40gu.pdf

NCEP013NH40GU http //www.ncepower.com NCE Automotive N-Channel Super Trench III Power MOSFET Description General Features The NCEP013NH40GU uses Super Trench III technology V =40V,I =276A DS D that is uniquely optimized to provide the most efficient high R =0.95m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.35m (typical) @ V =4.5V D

 8.24. Size:410K  ncepower
 ncep0155ag.pdf

http //www.ncepower.com NCEP0155AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0155AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.25. Size:838K  ncepower
 ncep014nh60gu.pdf

http //www.ncepower.com NCEP014NH60GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP014NH60GU uses Super Trench III technology that V =60V,I =318A DS D is uniquely optimized to provide the most efficient high R =1.3m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS

 8.26. Size:660K  ncepower
 ncep01p60g.pdf

Pb Free Product http //www.ncepower.com NCEP01P60G NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =22m (typical) @ V =-10V DS(ON) GS losses are minimized due to

 8.27. Size:374K  ncepower
 ncep0135af.pdf

http //www.ncepower.com NCEP0135AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 8.28. Size:353K  ncepower
 ncep018n30gu.pdf

http //www.ncepower.com NCEP018N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @

 8.29. Size:821K  ncepower
 ncep016n85ll.pdf

Pb Free Product NCEP016N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =360A DS D switching performance. Both conduction and switching power R =1.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extrem

 8.30. Size:711K  ncepower
 ncep018n10ll.pdf

NCEP018N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =320A DS D switching performance. Both conduction and switching power R =1.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 8.31. Size:412K  ncepower
 ncep0116as.pdf

Pb Free Product http //www.ncepower.com NCEP0116AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.32. Size:841K  ncepower
 ncep01p35ag.pdf

http //www.ncepower.com NCEP01P35AG NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-35A DS D switching performance. Both conduction and switching power R =37m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely l

 8.33. Size:955K  ncepower
 ncep016n60vd.pdf

NCEP016N60VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =305A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 8.34. Size:345K  ncepower
 ncep01t18.pdf

Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.35. Size:907K  ncepower
 ncep018nh30qu.pdf

http //www.ncepower.com NCEP018NH30QU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP018NH30QU uses Super Trench III technology V =30V,I =144A DS D that is uniquely optimized to provide the most efficient high R =1.4m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.0m (typical) @ V =10V DS(ON) GS switc

 8.36. Size:399K  ncepower
 ncep01nd35ag.pdf

http //www.ncepower.com NCEP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP01ND35AG uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are

 8.37. Size:432K  ncepower
 ncep0160.pdf

http //www.ncepower.com NCEP0160 NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 8.38. Size:686K  ncepower
 ncep018n60d.pdf

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 8.39. Size:445K  ncepower
 ncep0178ak.pdf

Pb Free Product http //www.ncepower.com NCEP0178AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.40. Size:671K  ncepower
 ncep011n25qu.pdf

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 8.41. Size:379K  ncepower
 ncep0140al.pdf

Pb Free Product http //www.ncepower.com NCEP0140AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.42. Size:598K  ncepower
 ncep01p40agu.pdf

http //www.ncepower.com NCEP01P40AGU NCE P-Channel Super Trench Power MOSFET Description The NCEP01P40AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-40A DS D switching performance. Both conduction and switching power R =35m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely

 8.43. Size:323K  ncepower
 ncep01t13bd.pdf

Pb Free Product http //www.ncepower.com NCEP01T13BD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.44. Size:882K  ncepower
 ncep019n10t.pdf

NCEP019N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =340A DS D switching performance. Both conduction and switching power R =2.0m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

 8.45. Size:1124K  ncepower
 ncep018n60gu.pdf

NCEP018N60GU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60GU uses Super Trench II technology that is V =60V,I =195A DS D uniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 8.46. Size:333K  ncepower
 ncep0160g.pdf

http //www.ncepower.com NCEP0160G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

 8.47. Size:354K  ncepower
 ncep0178al.pdf

http //www.ncepower.com NCEP0178AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.48. Size:343K  ncepower
 ncep01t13b.pdf

Pb Free Product http //www.ncepower.com NCEP01T13B NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.49. Size:847K  ncepower
 ncep015n60ll.pdf

NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 8.50. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 8.51. Size:345K  ncepower
 ncep01t15.pdf

Pb Free Product http //www.ncepower.com NCEP01T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.52. Size:317K  ncepower
 ncep01t13d.pdf

Pb Free Product http //www.ncepower.com NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.53. Size:313K  ncepower
 ncep0116k.pdf

http //www.ncepower.com NCEP0116K NCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.54. Size:449K  ncepower
 ncep0160f.pdf

Pb Free Product http //www.ncepower.com NCEP0160F NCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.55. Size:320K  ncepower
 ncep01t30t.pdf

Pb Free Product http //www.ncepower.com NCEP01T30T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.56. Size:671K  ncepower
 ncep011nh25qu.pdf

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 8.57. Size:431K  ncepower
 ncep0112as.pdf

Pb Free Product http //www.ncepower.com NCEP0112AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.58. Size:460K  ncepower
 ncep0135ak.pdf

Pb Free Product http //www.ncepower.com NCEP0135AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.59. Size:636K  ncepower
 ncep015nh30aqu.pdf

NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 8.60. Size:829K  ncepower
 ncep015nh30agu.pdf

NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 8.61. Size:356K  ncepower
 ncep0178af.pdf

Pb Free Product http //www.ncepower.com NCEP0178AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.62. Size:347K  ncepower
 ncep01t12.pdf

Pb Free Product http //www.ncepower.com NCEP01T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.63. Size:467K  ncepower
 ncep012n85ll.pdf

NCEP012N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =400A DS D uniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combination

 8.64. Size:396K  ncepower
 ncep01t18vd.pdf

http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.65. Size:350K  ncepower
 ncep0178.pdf

Pb Free Product http //www.ncepower.com NCEP0178 NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.66. Size:363K  ncepower
 ncep01t13ll.pdf

http //www.ncepower.com NCEP01T13LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l

 8.67. Size:671K  ncepower
 ncep011n25qu ncep011nh25qu.pdf

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 8.68. Size:762K  ncepower
 ncep015n85ll.pdf

NCEP015N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =370A DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM) DS(on) lo

 8.69. Size:659K  ncepower
 ncep01p60ag.pdf

NCEP01P60AG http //www.ncepower.com NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =19.5m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremel

 8.70. Size:323K  ncepower
 ncep01t18t.pdf

Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.71. Size:1032K  ncepower
 ncep015nh30gu.pdf

NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS swi

 8.72. Size:368K  ncepower
 ncep0178a.pdf

Pb Free Product http //www.ncepower.com NCEP0178A NCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.73. Size:295K  ncepower
 ncep0120q.pdf

http //www.ncepower.com NCEP0120Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0120Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =20A frequency switching performance. Both conduction and RDS(ON)=36m (typical) @ VGS=10V switching power losses are minimized due to an extremely low E

 8.74. Size:686K  ncepower
 ncep018n60.pdf

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 8.75. Size:637K  ncepower
 ncep01p35ak.pdf

Pb Free Product http //www.ncepower.com NCEP01P35AK NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 8.76. Size:440K  ncepower
 ncep0114as.pdf

Pb Free Product http //www.ncepower.com NCEP0114AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for