NCEP011N25QU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP011N25QU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 161 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 805 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00275 Ohm
Encapsulados: DFN3X3
Búsqueda de reemplazo de NCEP011N25QU MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP011N25QU datasheet
ncep011n25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p
ncep011n25qu ncep011nh25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p
ncep011nh25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p
ncep0116as.pdf
Pb Free Product http //www.ncepower.com NCEP0116AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEB301Q, NCEP008N30GU, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS, IRLB4132, NCEP011NH25QU, NCEP012N85LL, NCEP0135AF, NCEP0140AL, NCEP0155AG, NCEP015N30GU, NCEP015N60LL, NCEP0160
History: HYG210P06LQ1U
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