NCEP011NH25QU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP011NH25QU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 161 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 805 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00275 Ohm

Encapsulados: PDFN3.3X3.3-8L

 Búsqueda de reemplazo de NCEP011NH25QU MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP011NH25QU datasheet

 ..1. Size:671K  ncepower
 ncep011nh25qu.pdf pdf_icon

NCEP011NH25QU

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 ..2. Size:671K  ncepower
 ncep011n25qu ncep011nh25qu.pdf pdf_icon

NCEP011NH25QU

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 6.1. Size:671K  ncepower
 ncep011n25qu.pdf pdf_icon

NCEP011NH25QU

http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p

 7.1. Size:412K  ncepower
 ncep0116as.pdf pdf_icon

NCEP011NH25QU

Pb Free Product http //www.ncepower.com NCEP0116AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

MOSTRAR MÁS

Otros transistores... NCEP008N30GU, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS, NCEP011N25QU, AO3401, NCEP012N85LL, NCEP0135AF, NCEP0140AL, NCEP0155AG, NCEP015N30GU, NCEP015N60LL, NCEP0160, NCEP0160AG