NCEP0135AF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP0135AF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 139 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO-220F

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NCEP0135AF datasheet

 ..1. Size:374K  ncepower
 ncep0135af.pdf pdf_icon

NCEP0135AF

http //www.ncepower.com NCEP0135AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

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 ncep0135a.pdf pdf_icon

NCEP0135AF

Pb Free Product http //www.ncepower.com NCEP0135A NCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:460K  ncepower
 ncep0135ak.pdf pdf_icon

NCEP0135AF

Pb Free Product http //www.ncepower.com NCEP0135AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:687K  ncepower
 ncep013nh40gu.pdf pdf_icon

NCEP0135AF

NCEP013NH40GU http //www.ncepower.com NCE Automotive N-Channel Super Trench III Power MOSFET Description General Features The NCEP013NH40GU uses Super Trench III technology V =40V,I =276A DS D that is uniquely optimized to provide the most efficient high R =0.95m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.35m (typical) @ V =4.5V D

MOSTRAR MÁS

Otros transistores... NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS, NCEP011N25QU, NCEP011NH25QU, NCEP012N85LL, IRFP260, NCEP0140AL, NCEP0155AG, NCEP015N30GU, NCEP015N60LL, NCEP0160, NCEP0160AG, NCEP0160G, NCEP016N10LL