NCEP0135AF Todos los transistores

 

NCEP0135AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP0135AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 139 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TO-220F

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NCEP0135AF Datasheet (PDF)

 ..1. Size:374K  ncepower
ncep0135af.pdf

NCEP0135AF
NCEP0135AF

http://www.ncepower.com NCEP0135AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 5.1. Size:396K  ncepower
ncep0135a.pdf

NCEP0135AF
NCEP0135AF

Pb Free Producthttp://www.ncepower.com NCEP0135ANCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:460K  ncepower
ncep0135ak.pdf

NCEP0135AF
NCEP0135AF

Pb Free Producthttp://www.ncepower.com NCEP0135AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:687K  ncepower
ncep013nh40gu.pdf

NCEP0135AF
NCEP0135AF

NCEP013NH40GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP013NH40GU uses Super Trench III technology V =40V,I =276ADS Dthat is uniquely optimized to provide the most efficient highR =0.95m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.35m (typical) @ V =4.5VD

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