NCEP0155AG Todos los transistores

 ..1. Size:410K  ncepower
 ncep0155ag.pdf

http //www.ncepower.com NCEP0155AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0155AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.1. Size:347K  ncepower
 ncep015n30gu.pdf

http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @

 7.2. Size:847K  ncepower
 ncep015n60ll.pdf

NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 7.3. Size:636K  ncepower
 ncep015nh30aqu.pdf

NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 7.4. Size:829K  ncepower
 ncep015nh30agu.pdf

NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 7.5. Size:762K  ncepower
 ncep015n85ll.pdf

NCEP015N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =370A DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM) DS(on) lo

 7.6. Size:1032K  ncepower
 ncep015nh30gu.pdf

NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS swi