FQB33N10L Todos los transistores

 ..1. Size:1074K  fairchild semi
 fqb33n10l fqi33n10l.pdf

October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been

 0.1. Size:1032K  fairchild semi
 fqb33n10ltm.pdf

October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been

 6.1. Size:938K  fairchild semi
 fqb33n10tm fqb33n10 fqi33n10.pdf

October 2008 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been especial

 6.2. Size:1050K  onsemi
 fqb33n10.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur