NCEP0178AL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP0178AL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 354 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO-251

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NCEP0178AL datasheet

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NCEP0178AL

http //www.ncepower.com NCEP0178AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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NCEP0178AL

Pb Free Product http //www.ncepower.com NCEP0178AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP0178AL

Pb Free Product http //www.ncepower.com NCEP0178AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP0178AL

Pb Free Product http //www.ncepower.com NCEP0178A NCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

MOSTRAR MÁS

Otros transistores... NCEP015N60LL, NCEP0160, NCEP0160AG, NCEP0160G, NCEP016N10LL, NCEP016N60VD, NCEP016N85LL, NCEP0178, IRF530, NCEP0178D, NCEP0178F, NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU, NCEP018N60D, NCEP018N60GU