NCEP0178D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP0178D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO-263

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NCEP0178D datasheet

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NCEP0178D

Pb Free Product http //www.ncepower.com NCEP0178D NCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP0178D

Pb Free Product http //www.ncepower.com NCEP0178F NCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP0178D

Pb Free Product http //www.ncepower.com NCEP0178AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.3. Size:354K  ncepower
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NCEP0178D

http //www.ncepower.com NCEP0178AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

MOSTRAR MÁS

Otros transistores... NCEP0160, NCEP0160AG, NCEP0160G, NCEP016N10LL, NCEP016N60VD, NCEP016N85LL, NCEP0178, NCEP0178AL, CS150N03A8, NCEP0178F, NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU, NCEP018N60D, NCEP018N60GU, NCEP0190G