NCEP018N60GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP018N60GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 195 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 960 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: DFN5X6-8L

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NCEP018N60GU datasheet

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NCEP018N60GU

NCEP018N60GU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60GU uses Super Trench II technology that is V =60V,I =195A DS D uniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

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NCEP018N60GU

NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi

 4.2. Size:686K  ncepower
 ncep018n60d.pdf pdf_icon

NCEP018N60GU

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 4.3. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf pdf_icon

NCEP018N60GU

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

MOSTRAR MÁS

Otros transistores... NCEP0178AL, NCEP0178D, NCEP0178F, NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU, NCEP018N60D, BS170, NCEP0190G, NCEP019N10T, NCEP01P35A, NCEP01P35AG, NCEP01P35AK, NCEP01P40AGU, NCEP01P60AG, NCEP01P60G