NCEP01P35AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01P35AK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 105 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 35 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 46 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 0.056 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET NCEP01P35AK
NCEP01P35AK Datasheet (PDF)
ncep01p35ak.pdf
Pb Free Producthttp://www.ncepower.com NCEP01P35AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep01p35a.pdf
Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-
ncep01p35ag.pdf
http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l
ncep01p60g.pdf
Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to
ncep01p40agu.pdf
http://www.ncepower.com NCEP01P40AGUNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P40AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-40ADS Dswitching performance. Both conduction and switching power R =35m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely
ncep01p60ag.pdf
NCEP01P60AGhttp://www.ncepower.comNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =19.5m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
