NCEP01T11D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T11D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 108 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 58 nS
Cossⓘ - Capacitancia de salida: 790 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Encapsulados: TO-263
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NCEP01T11D datasheet
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ncep01t11d.pdf 
Pb Free Product http //www.ncepower.com NCEP01T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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ncep01t11.pdf
Pb Free Product http //www.ncepower.com NCEP01T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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ncep01t13.pdf
Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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ncep01t13ad.pdf
Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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ncep01t10g.pdf
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ncep01t18d.pdf
Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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ncep01t13a.pdf
Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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ncep01t12d.pdf
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ncep01t18.pdf
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ncep01t13bd.pdf
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ncep01t13b.pdf
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ncep01t15.pdf
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ncep01t13d.pdf
Pb Free Product http //www.ncepower.com NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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ncep01t12.pdf
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ncep01t13ll.pdf
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ncep01t18t.pdf
Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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