NCEP0220F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP0220F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 82 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET NCEP0220F
NCEP0220F Datasheet (PDF)
ncep0220f.pdf
http://www.ncepower.com NCEP0220FNCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0225f.pdf
http://www.ncepower.com NCEP0225FNCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0225k.pdf
http://www.ncepower.com NCEP0225KNCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0225g.pdf
http://www.ncepower.com NCEP0225GNCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918