NCEP023NH30GU Datasheet. Equivalente

 ..1. Size:713K  ncepower
 ncep023nh30gu.pdf

http //www.ncepower.com NCEP023NH30GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH30GU uses Super Trench III technology V =30V,I =114A DS D that is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5V DS(ON) GS switchi

 5.1. Size:797K  ncepower
 ncep023nh85agu.pdf

NCEP023NH85AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET (Primary) Description General Features The NCEP023NH85AGU uses Super Trench III technology V =85V,I =250A DS D that is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5V DS(ON)

 5.2. Size:687K  ncepower
 ncep023nh85gu.pdf

NCEP023NH85GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH85GU uses Super Trench III technology that V =85V,I =245A DS D is uniquely optimized to provide the most efficient high R =2.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) D

 6.1. Size:855K  ncepower
 ncep023n10d.pdf

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 6.2. Size:2030K  ncepower
 ncep023n10t.pdf

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =280A DS D switching performance. Both conduction and switching power R =1.85m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 6.3. Size:635K  ncepower
 ncep023n10 ncep023n10d.pdf

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.4. Size:939K  ncepower
 ncep023n85m.pdf

NCEP023N85M, NCEP023N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ex

 6.5. Size:940K  ncepower
 ncep023n85.pdf

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 6.6. Size:940K  ncepower
 ncep023n85d.pdf

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 6.7. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.8. Size:409K  ncepower
 ncep023n10ll.pdf

NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 6.9. Size:400K  ncepower
 ncep023n85t.pdf

NCEP023N85T NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo

 6.10. Size:855K  ncepower
 ncep023n10.pdf

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext