NCEP02525G Datasheet. Equivalente

 ..1. Size:926K  ncepower
 ncep02525g.pdf

http //www.ncepower.com NCEP02525G NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =250V,I =25A DS D switching performance. Both conduction and switching power R =72m (typical) @ V =10V DS(ON) GS losses are minimized due to an extrem

 5.1. Size:357K  ncepower
 ncep02525f.pdf

http //www.ncepower.com NCEP02525F NCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.2. Size:433K  ncepower
 ncep02525k.pdf

http //www.ncepower.com NCEP02525K NCE N-Channel Super Trench Power MOSFET Description The NCEP02525K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.1. Size:337K  ncepower
 ncep02590d.pdf

http //www.ncepower.com NCEP02590D NCE N-Channel Super Trench Power MOSFET Description The NCEP02590D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.2. Size:389K  ncepower
 ncep02503s.pdf

http //www.ncepower.com NCEP02503S NCE N-Channel Super Trench Power MOSFET Description The NCEP02503S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.3. Size:953K  ncepower
 ncep025n85ll.pdf

Pb Free Product NCEP025N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =260A DS D uniquely optimized to provide the most efficient high frequency R =2.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product

 7.4. Size:1320K  ncepower
 ncep025n60.pdf

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 7.5. Size:744K  ncepower
 ncep02515f.pdf

Pb Free Product http //www.ncepower.com NCEP02515F NCE N-Channel Super Trench Power MOSFET Description The NCEP02515F uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =250V,I =15A DS D frequency switching performance. Both conduction and R =220m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to

 7.6. Size:748K  ncepower
 ncep025n60ag.pdf

http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)

 7.7. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 7.8. Size:337K  ncepower
 ncep02590t.pdf

http //www.ncepower.com NCEP02590T NCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.9. Size:807K  ncepower
 ncep025n30g.pdf

http //www.ncepower.com NCEP025N30G NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =85A DS D uniquely optimized to provide the most efficient high frequency R =2.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =4.5V

 7.10. Size:816K  ncepower
 ncep025f90d.pdf

NCEP025F90D http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP025F90D uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =250V,I =90A DS D frequency switching performance. Both conduction and R

 7.11. Size:414K  ncepower
 ncep02505s.pdf

http //www.ncepower.com NCEP02505S NCE N-Channel Super Trench Power MOSFET Description The NCEP02505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.12. Size:337K  ncepower
 ncep025f90t.pdf

http //www.ncepower.com NCEP025F90T NCE N-Channel Super Trench Power MOSFET Description The NCEP025F90T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.13. Size:309K  ncepower
 ncep02580.pdf

http //www.ncepower.com NCEP02580 NCE N-Channel Super Trench Power MOSFET Description The NCEP02580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.14. Size:336K  ncepower
 ncep02590.pdf

http //www.ncepower.com NCEP02590 NCE N-Channel Super Trench Power MOSFET Description The NCEP02590 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 7.15. Size:333K  ncepower
 ncep025n60g.pdf

http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 7.16. Size:379K  ncepower
 ncep02515k.pdf

http //www.ncepower.com NCEP02515K NCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.17. Size:410K  ncepower
 ncep025n12ll.pdf

NCEP025N12LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina

 7.18. Size:290K  ncepower
 ncep02580f.pdf

http //www.ncepower.com NCEP02580F NCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.19. Size:1320K  ncepower
 ncep025n60d.pdf

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 7.20. Size:1038K  ncepower
 ncep02580d.pdf

http //www.ncepower.com NCEP02580D NCE N-Channel Super Trench Power MOSFET Description The NCEP02580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switch