NCEP02590D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

http://www.ncepower.com NCEP02590DNCE N-Channel Super Trench Power MOSFET Description The NCEP02590D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP02590TNCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP02590NCE N-Channel Super Trench Power MOSFET Description The NCEP02590 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

http://www.ncepower.com NCEP02503SNCE N-Channel Super Trench Power MOSFET Description The NCEP02503S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free ProductNCEP025N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =260ADS Duniquely optimized to provide the most efficient high frequencyR =2.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

Pb Free Producthttp://www.ncepower.com NCEP02515FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02515F uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =15ADS Dfrequency switching performance. Both conduction andR =220m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

http://www.ncepower.com NCEP02525FNCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.com NCEP025N30GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =85ADS Duniquely optimized to provide the most efficient high frequencyR =2.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.8m (typical) @ V =4.5V

NCEP025F90Dhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP025F90D uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =90ADS Dfrequency switching performance. Both conduction and R

http://www.ncepower.com NCEP02505SNCE N-Channel Super Trench Power MOSFET Description The NCEP02505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.com NCEP025F90TNCE N-Channel Super Trench Power MOSFET Description The NCEP025F90T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.com NCEP02580NCE N-Channel Super Trench Power MOSFET Description The NCEP02580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http://www.ncepower.com NCEP02525GNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =250V,I =25ADS Dswitching performance. Both conduction and switching power R =72m (typical) @ V =10VDS(ON) GSlosses are minimized due to an extrem

http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

http://www.ncepower.com NCEP02515KNCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

NCEP025N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina

http://www.ncepower.com NCEP02525KNCE N-Channel Super Trench Power MOSFET Description The NCEP02525K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.com NCEP02580FNCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

http://www.ncepower.comNCEP02580DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02580D uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitch