FQB34P10TMF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB34P10TMF085
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 155 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 33.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 85 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO263 D2PAK
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FQB34P10TMF085 Datasheet (PDF)
fqb34p10tm fqi34p10tu.pdf
QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail
fqb34p10tm f085.pdf
March 2009TMQFETFQB34P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especi
fqb34p10 fqi34p10.pdf
QFETFQB34P10 / FQI34P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 170 pF)This advanced technology has been especially tail
fqb34p10.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... SDD04N60 , FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , IRF640N , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918