NCEP026N85D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP026N85D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 240 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 1850 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: TO-263

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NCEP026N85D datasheet

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NCEP026N85D

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

 ..2. Size:978K  ncepower
 ncep026n85d.pdf pdf_icon

NCEP026N85D

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

 4.1. Size:978K  ncepower
 ncep026n85.pdf pdf_icon

NCEP026N85D

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

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NCEP026N85D

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

MOSTRAR MÁS

Otros transistores... NCEP0260D, NCEP026N10, NCEP026N10D, NCEP026N10F, NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, IRF630, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D