NCEP040N10M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP040N10M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO-220
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NCEP040N10M Datasheet (PDF)
ncep040n10m.pdf

NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG
ncep040n10.pdf

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n10d.pdf

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n10gu.pdf

http://www.ncepower.com NCEP040N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N10GU uses Super Trench II technology that is V =100V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
Otros transistores... NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , NCEP039N10F , NCEP040N10GU , STP80NF70 , NCEP040N12 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD , NCEP040NH150LL , NCEP045N10AG .
History: SFP040N40C2 | NCE3080K | WMS06N10TS | STH80N10LF7-2AG | SFG10R10GF | IRFR120TR | FS50KMJ-03F
History: SFP040N40C2 | NCE3080K | WMS06N10TS | STH80N10LF7-2AG | SFG10R10GF | IRFR120TR | FS50KMJ-03F



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