NCEP050N12GU Todos los transistores

 

NCEP050N12GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP050N12GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCEP050N12GU Datasheet (PDF)

 ..1. Size:323K  ncepower
 ncep050n12gu.pdf pdf_icon

NCEP050N12GU

NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 4.1. Size:1315K  ncepower
 ncep050n12d.pdf pdf_icon

NCEP050N12GU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.2. Size:1315K  ncepower
 ncep050n12.pdf pdf_icon

NCEP050N12GU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 4.3. Size:1315K  ncepower
 ncep050n12 ncep050n12d.pdf pdf_icon

NCEP050N12GU

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

MOSTRAR MÁS

Otros transistores... NCEP048NH150D , NCEP048NH150T , NCEP050N10M , NCEP050N10MD , NCEP050N10MG , NCEP050N12 , NCEP050N12AGU , NCEP050N12D , RU7088R , NCEP050N85G , NCEP050N85M , NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G , NCEP055N10M , NCEP055N10U .

History: SVG087R0NT | APT8020JLL | PJF10NA80 | NCEP050N10MD | STI76NF75 | PMZB600UNE | SST176

 

 
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