NCEP055N10M Todos los transistores

 

NCEP055N10M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP055N10M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 72 nC
   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-220
 

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NCEP055N10M Datasheet (PDF)

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NCEP055N10M

NCEP055N10M, NCEP055N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =110ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.1. Size:420K  ncepower
 ncep055n10u.pdf pdf_icon

NCEP055N10M

NCEP055N10UNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

 4.2. Size:405K  ncepower
 ncep055n10.pdf pdf_icon

NCEP055N10M

NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.3. Size:337K  ncepower
 ncep055n10g.pdf pdf_icon

NCEP055N10M

http://www.ncepower.com NCEP055N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

MOSTRAR MÁS

Otros transistores... NCEP050N12D , NCEP050N12GU , NCEP050N85G , NCEP050N85M , NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G , BS170 , NCEP055N10U , NCEP055N12 , NCEP055N12AG , NCEP055N12D , NCEP055N12G , NCEP055N30GU , NCEP055N60GU , NCEP058N85GU .

History: JFPC18N50C | HSBB4016 | SWD19N10 | SSP60R280SFD | R6530KNZ | WST3407A | JFPC13N65C

 

 
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