NCEP055N60GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP055N60GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 28.2 nC
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 338 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEP055N60GU
NCEP055N60GU Datasheet (PDF)
ncep055n60gu.pdf
http://www.ncepower.com NCEP055N60GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N60GU uses Super Trench II technology that is VDS =60V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (Typ.) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
ncep055n12ag.pdf
NCEP055N12AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m
ncep055n85.pdf
NCEP055N85, NCEP055N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep055n85 ncep055n85d.pdf
NCEP055N85, NCEP055N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep055n10u.pdf
NCEP055N10UNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin
ncep055n10.pdf
NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep055n30gu.pdf
http://www.ncepower.com NCEP055N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.4m (typical) @
ncep055n10g.pdf
http://www.ncepower.com NCEP055N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep055n10m.pdf
NCEP055N10M, NCEP055N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =110ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep055n10d.pdf
NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep055n10 ncep055n10d.pdf
NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep055n12d.pdf
NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263
ncep055n12.pdf
NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263
ncep055n85d.pdf
NCEP055N85, NCEP055N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep055n12 ncep055n12d.pdf
NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263
ncep055n12g.pdf
NCEP055N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100