NCEP060N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP060N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 140 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 53 nC
Tiempo de subida (tr): 59 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCEP060N10
NCEP060N10 Datasheet (PDF)
ncep060n10 ncep060n10d.pdf
NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep060n10f.pdf
NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina
ncep060n10g.pdf
NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin
ncep060n60g.pdf
http://www.ncepower.com NCEP060N60GNCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEP060N60G uses Super Trench II technology that is VDS =60V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m (max) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RD
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
