NCEP063N85G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCEP063N85GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.5m , typical@ VGS=10V losses are minimized due to an extremely low combination

NCEP063N10GUNCE N-Channel Super Trench II Power MOSFET Description The NCEP063N10GU uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.3m (typical) @ VGS=10V losses are minimized due to an extremely low combination of

NCEP063N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =95A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.4m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.8m , typical @ VGS=4.5V losses are

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

NCEP065N12AGUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =100ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =6.9m , typical @ V =4.5VDS(ON) GSlosses ar

http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

http://www.ncepower.com NCEP060N60GNCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEP060N60G uses Super Trench II technology that is VDS =60V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m (max) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RD

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

http://www.ncepower.com NCEP065N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP065N10GU uses Super Trench II technology that is V =100V,I =90ADS Duniquely optimized to provide the most efficient high frequencyR =5.9m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R prod

NCEP065N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

NCEP065N85,NCEP065N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre

NCEP065N85,NCEP065N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre

NCEP065N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

http://www.ncepower.com NCEP065N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power

NCEP065N85NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.7m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low com

http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

NCEP065N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m

http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)