NCEP075N85GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP075N85GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 41.4 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 393 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEP075N85GU
NCEP075N85GU Datasheet (PDF)
ncep075n85gu.pdf
NCEP075N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =75ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combinati
ncep075n85agu.pdf
NCEP075N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz
ncep072n10.pdf
http://www.ncepower.com NCEP072N10NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
ncep070n10agu.pdf
NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz
ncep070n12.pdf
NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
ncep070n12 ncep070n12d.pdf
NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
ncep070n12d.pdf
NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
ncep078n10ak.pdf
NCEP078N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4m , typical@ VGS=4.5V losses are minimized
ncep072n10a.pdf
http://www.ncepower.com NCEP072N10ANCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP072N10A uses Super Trench II technology that is V =100V,I =88ADS Duniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5VDS(ON) GS
ncep070n10gu.pdf
NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati
ncep078n10ag.pdf
NCEP078N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.2m , typical@ VGS=4.5V losses are minimized
ncep078n10g.pdf
NCEP078N10GNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =75ADS Dswitching performance. Both conduction and switching power R =7.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combination
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100