NCEP090N85A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP090N85A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO-220

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NCEP090N85A datasheet

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NCEP090N85A

http //www.ncepower.com NCEP090N85A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss

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NCEP090N85A

http //www.ncepower.com NCEP090N85AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AQU uses Super Trench II technology that V =85V,I =56A DS D is uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5V DS(ON) GS switching

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NCEP090N85A

http //www.ncepower.com NCEP090N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power

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NCEP090N85A

http //www.ncepower.com NCEP090N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

MOSTRAR MÁS

Otros transistores... NCEP085N10AS, NCEP088NH150GU, NCEP090N10AGU, NCEP090N10GU, NCEP090N12AGU, NCEP090N20, NCEP090N20D, NCEP090N20T, STP80NF70, NCEP090N85AGU, NCEP090N85AQU, NCEP090N85GU, NCEP090N85QU, NCEP092N10AS, NCEP095N10, NCEP095N10A, NCEP095N10AG