NCEP090N85A Todos los transistores

 

NCEP090N85A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP090N85A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de NCEP090N85A MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP090N85A Datasheet (PDF)

 ..1. Size:297K  ncepower
ncep090n85a.pdf pdf_icon

NCEP090N85A

http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss

 0.1. Size:706K  ncepower
ncep090n85aqu.pdf pdf_icon

NCEP090N85A

http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching

 0.2. Size:329K  ncepower
ncep090n85agu.pdf pdf_icon

NCEP090N85A

http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power

 4.1. Size:331K  ncepower
ncep090n85gu.pdf pdf_icon

NCEP090N85A

http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

Otros transistores... NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , 20N50 , NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG .

History: RU3080L | STI150N10F7

 

 
Back to Top

 


 
.