NCEP090N85AQU Todos los transistores

 

NCEP090N85AQU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP090N85AQU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L

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NCEP090N85AQU Datasheet (PDF)

 ..1. Size:706K  ncepower
ncep090n85aqu.pdf

NCEP090N85AQU
NCEP090N85AQU

http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching

 3.1. Size:297K  ncepower
ncep090n85a.pdf

NCEP090N85AQU
NCEP090N85AQU

http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss

 3.2. Size:329K  ncepower
ncep090n85agu.pdf

NCEP090N85AQU
NCEP090N85AQU

http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power

 4.1. Size:331K  ncepower
ncep090n85gu.pdf

NCEP090N85AQU
NCEP090N85AQU

http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

 4.2. Size:881K  ncepower
ncep090n85qu.pdf

NCEP090N85AQU
NCEP090N85AQU

Pb Free Producthttp://www.ncepower.com NCEP090N85QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP090N85QU uses Super Trench II technology that is V =85V,I =56ADS Duniquely optimized to provide the most efficient high frequencyR =8.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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