NCEP090N85AQU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP090N85AQU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 185 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: DFN3.3X3.3-8L
Búsqueda de reemplazo de NCEP090N85AQU MOSFET
NCEP090N85AQU Datasheet (PDF)
ncep090n85aqu.pdf

http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching
ncep090n85a.pdf

http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
ncep090n85agu.pdf

http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
ncep090n85gu.pdf

http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
Otros transistores... NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , NCEP090N85A , NCEP090N85AGU , IRFZ24N , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG , NCEP10N12 , NCEP10N12AK .
History: WMO240N10LG2 | JFHM50N50C | RCX200N20 | SWD630 | WMQ140DNV6LG4 | JFPC20N60C | WTC9435
History: WMO240N10LG2 | JFHM50N50C | RCX200N20 | SWD630 | WMQ140DNV6LG4 | JFPC20N60C | WTC9435



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