NCEP090N85QU Todos los transistores

 

NCEP090N85QU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP090N85QU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 31 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L
 

 Búsqueda de reemplazo de NCEP090N85QU MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP090N85QU Datasheet (PDF)

 ..1. Size:881K  ncepower
ncep090n85qu.pdf pdf_icon

NCEP090N85QU

Pb Free Producthttp://www.ncepower.com NCEP090N85QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP090N85QU uses Super Trench II technology that is V =85V,I =56ADS Duniquely optimized to provide the most efficient high frequencyR =8.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

 4.1. Size:331K  ncepower
ncep090n85gu.pdf pdf_icon

NCEP090N85QU

http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

 4.2. Size:297K  ncepower
ncep090n85a.pdf pdf_icon

NCEP090N85QU

http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss

 4.3. Size:706K  ncepower
ncep090n85aqu.pdf pdf_icon

NCEP090N85QU

http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching

Otros transistores... NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , NCEP090N85A , NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU , 18N50 , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , NCEP10N12G .

History: WMO50P04T1 | WSD3045DN

 

 
Back to Top

 


 
.