NCEP095N10AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP095N10AG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 54 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEP095N10AG
NCEP095N10AG Datasheet (PDF)
ncep095n10ag.pdf
NCEP095N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.5m , typical@ VGS=4.5V losses are mi
ncep095n10a.pdf
NCEP095N10ANCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =11m , typical@ V =4.5VDS(ON) GSlosses are minimi
ncep095n10.pdf
NCEP095N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
ncep090n20t.pdf
NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep090n85gu.pdf
http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep090n20 ncep090n20d.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n85qu.pdf
Pb Free Producthttp://www.ncepower.com NCEP090N85QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP090N85QU uses Super Trench II technology that is V =85V,I =56ADS Duniquely optimized to provide the most efficient high frequencyR =8.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
ncep090n85a.pdf
http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
ncep090n85aqu.pdf
http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching
ncep092n10as.pdf
NCEP092N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =14A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.4m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical@ VGS=4.5V losses are minimize
ncep090n85agu.pdf
http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
ncep090n10gu.pdf
NCEP090N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati
ncep090n20d.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n12agu.pdf
NCEP090N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are
ncep090n10agu.pdf
NCEP090N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min
ncep090n20.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100