NCEP10N12D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP10N12D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-263

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NCEP10N12D Datasheet (PDF)

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ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

..2. Size:417K ncepower
ncep10n12d.pdf

5.1. Size:729K ncepower
ncep10n12ak.pdf

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

5.2. Size:937K ncepower
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NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

5.3. Size:409K ncepower
ncep10n12g.pdf

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

5.4. Size:417K ncepower
ncep10n12.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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