NCEP10N12G Todos los transistores

 

NCEP10N12G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP10N12G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCEP10N12G Datasheet (PDF)

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NCEP10N12G

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

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NCEP10N12G

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

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NCEP10N12G

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

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NCEP10N12G

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

MOSTRAR MÁS

Otros transistores... NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , IRFZ46N , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , NCEP11N12AGU .

History: IPD053N08N3G | WMR07N03T1 | WMM190N03TS | OSG90R250HF | CSD18531Q5A | WMN13N50C4

 

 
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