NCEP10N12G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP10N12G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: DFN5X6-8L

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NCEP10N12G datasheet

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NCEP10N12G

NCEP10N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

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NCEP10N12G

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

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 ncep10n12ak.pdf pdf_icon

NCEP10N12G

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

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NCEP10N12G

NCEP10N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =8.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

MOSTRAR MÁS

Otros transistores... NCEP090N85QU, NCEP092N10AS, NCEP095N10, NCEP095N10A, NCEP095N10AG, NCEP10N12, NCEP10N12AK, NCEP10N12D, SI2302, NCEP10N12K, NCEP10N85AG, NCEP10N85AQ, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU