NCEP10N85AG Todos los transistores

 

NCEP10N85AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP10N85AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEP10N85AG MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP10N85AG Datasheet (PDF)

 ..1. Size:329K  ncepower
 ncep10n85ag.pdf pdf_icon

NCEP10N85AG

http://www.ncepower.com NCEP10N85AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss

 4.1. Size:320K  ncepower
 ncep10n85aq.pdf pdf_icon

NCEP10N85AG

http://www.ncepower.com NCEP10N85AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss

 7.1. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf pdf_icon

NCEP10N85AG

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 7.2. Size:729K  ncepower
 ncep10n12ak.pdf pdf_icon

NCEP10N85AG

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

MOSTRAR MÁS

Otros transistores... NCEP095N10 , NCEP095N10A , NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , 75N75 , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , NCEP11N12AGU , NCEP1212AS , NCEP1214AS .

History: WMO13N10TS | MTA55N02N3

 

 
Back to Top

 


 
.