FCPF2250N80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF2250N80Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 11 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.25 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de FCPF2250N80Z MOSFET
FCPF2250N80Z Datasheet (PDF)
fcpf2250n80z.pdf

December 2014FCPF2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.
fcpf2250n80z.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf2250n80z.pdf

isc N-Channel MOSFET Transistor FCPF2250N80ZFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
fcp22n60n fcpf22n60nt.pdf

July 2009SupreMOS TMFCP22N60N / FCPF22N60NT tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies.
Otros transistores... FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , 7N65 , FQB7P20 , FQB7P20TMF085 , FQB8N60C , FCH072N60FF085 , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC .
History: IRL3103D2 | IRLZ10



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPF8N60BJ | JMPF840BJ | JMPF7N65BJ | JMPF630BJ | JMPF5N50BJ | JMPF4N65BJ | JMPF4N60BJ | JMPF25N50BJ | JMPF20N65BJ | JMPF20N60BJ | JMSL0303TU | JMSL0303TG | JMSL0303AU | JMSL0303AK | JMSL0303AG | JMSL0315AK
Popular searches
2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet