NCEP1212AS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1212AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7 nS
Cossⓘ - Capacitancia de salida: 274 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Encapsulados: SOP8
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NCEP1212AS datasheet
..1. Size:427K ncepower
ncep1212as.pdf 
Pb Free Product http //www.ncepower.com NCEP1212AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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ncep1214as.pdf
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ncep1216as.pdf
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ncep12t11.pdf
http //www.ncepower.com NCEP12T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
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ncep1278.pdf
Pb Free Product http //www.ncepower.com NCEP1278 NCE N-Channel Super Trench Power MOSFET Description The NCEP1278 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
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ncep1290ak.pdf
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ncep12n10aq.pdf
NCEP12N10AQ http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V
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ncep12t12d.pdf
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ncep12t15.pdf
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ncep1260f.pdf
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ncep12t12.pdf
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8.9. Size:349K ncepower
ncep12n12k.pdf
NCEP12N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination
8.10. Size:347K ncepower
ncep12t18.pdf
Pb Free Product http //www.ncepower.com NCEP12T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
8.11. Size:501K ncepower
ncep1250ak.pdf
Pb Free Product http //www.ncepower.com NCEP1250AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1250AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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ncep12t10f.pdf
Pb Free Product http //www.ncepower.com NCEP12T10F NCE N-Channel Super Trench Power MOSFET Description The NCEP12T10F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
8.13. Size:394K ncepower
ncep12n12ak.pdf
NCEP12N12AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini
8.14. Size:358K ncepower
ncep12n12as.pdf
NCEP12N12AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi
8.15. Size:302K ncepower
ncep12n12.pdf
NCEP12N12 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
8.16. Size:340K ncepower
ncep12t13a.pdf
http //www.ncepower.com NCEP12T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Otros transistores... NCEP10N12K, NCEP10N85AG, NCEP10N85AQ, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU, 8N60, NCEP1214AS, NCEP1216AS, NCEP1250AK, NCEP1260F, NCEP1278, NCEP1290AK, NCEP12N10AQ, NCEP12N12
