NCEP12N12AK Todos los transistores

 

NCEP12N12AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP12N12AK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: TO-252
 

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NCEP12N12AK datasheet

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NCEP12N12AK

NCEP12N12AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini

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NCEP12N12AK

NCEP12N12AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi

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NCEP12N12AK

NCEP12N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination

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NCEP12N12AK

NCEP12N12 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

MOSTRAR MÁS

Otros transistores... NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK , NCEP12N10AQ , NCEP12N12 , IRFZ46N , NCEP12N12AS , NCEP12N12K , NCEP12T10F , NCEP12T11 , NCEP12T13A , NCEP12T15 , NCEP12T18 , NCEP13N10AS .

History: AGM20P16AS | AGM10N15R | JMH65R430AE | AGM305MA | HFS2N60 | SW2N10 | AGM20N65F

 

 
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