NCEP12T11 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP12T11

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 108 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO-220

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NCEP12T11 datasheet

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NCEP12T11

http //www.ncepower.com NCEP12T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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NCEP12T11

Pb Free Product http //www.ncepower.com NCEP12T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP12T11

http //www.ncepower.com NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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NCEP12T11

Pb Free Product http //www.ncepower.com NCEP12T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

MOSTRAR MÁS

Otros transistores... NCEP1278, NCEP1290AK, NCEP12N10AQ, NCEP12N12, NCEP12N12AK, NCEP12N12AS, NCEP12N12K, NCEP12T10F, IRFB7545, NCEP12T13A, NCEP12T15, NCEP12T18, NCEP13N10AS, NCEP1505S, NCEP1520AK, NCEP1520BK, NCEP1520G