FQB7P20TMF085 Todos los transistores

 5.1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

 5.2. Size:819K  onsemi
 fqb7p20tm f085.pdf

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

 7.1. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf

November 2008 QFET FQB7P20 / FQI7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been espec

 7.2. Size:1324K  onsemi
 fqb7p20.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur