NCEP12T18 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP12T18
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 2480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO-220
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NCEP12T18 Datasheet (PDF)
ncep12t18.pdf

Pb Free Producthttp://www.ncepower.com NCEP12T18NCE N-Channel Super Trench Power MOSFET Description The NCEP12T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep12t11.pdf

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep12t12d.pdf

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep12t15.pdf

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Otros transistores... NCEP12N12 , NCEP12N12AK , NCEP12N12AS , NCEP12N12K , NCEP12T10F , NCEP12T11 , NCEP12T13A , NCEP12T15 , 2SK3918 , NCEP13N10AS , NCEP1505S , NCEP1520AK , NCEP1520BK , NCEP1520G , NCEP1545A , NCEP1545AG , NCEP1545AK .
History: FDBL9401L-F085 | RU3080L | STI150N10F7 | KIA3510A-252 | IRFB3006G | IRFR4510PBF | IRF7402PBF
History: FDBL9401L-F085 | RU3080L | STI150N10F7 | KIA3510A-252 | IRFB3006G | IRFR4510PBF | IRF7402PBF



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