NCEP13N10AS Todos los transistores

 

NCEP13N10AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP13N10AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET NCEP13N10AS

 

NCEP13N10AS Datasheet (PDF)

 ..1. Size:302K  ncepower
ncep13n10as.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP13N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP13N10AS uses Super Trench II technology that is VDS =100V,ID =10A uniquely optimized to provide the most efficient high frequency RDS(ON)=12m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15m (typical) @ VGS=4.5V losses

 9.1. Size:387K  1
ncep1520k.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.2. Size:320K  ncepower
ncep10n85aq.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP10N85AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss

 9.3. Size:1260K  ncepower
ncep1580gu.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1580GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1580GU uses Super Trench technology that isV =150V,I =80ADS Duniquely optimized to provide the most efficient highR =12.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 9.4. Size:417K  ncepower
ncep10n12 ncep10n12d.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 9.5. Size:347K  ncepower
ncep1505s.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1505SNCE N-Channel Super Trench Power MOSFET Description The NCEP1505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 9.6. Size:532K  ncepower
ncep1580d.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1580DNCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 9.7. Size:349K  ncepower
ncep1520g.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 9.8. Size:309K  ncepower
ncep12t11.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 9.9. Size:426K  ncepower
ncep1545ag.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1545AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

 9.10. Size:338K  ncepower
ncep1278.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1278NCE N-Channel Super Trench Power MOSFET Description The NCEP1278 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.11. Size:302K  ncepower
ncep11n10as.pdf

NCEP13N10AS
NCEP13N10AS

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 9.12. Size:812K  ncepower
ncep1580f.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1580FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP1580F uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching

 9.13. Size:420K  ncepower
ncep1214as.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1214ASNCE N-Channel Super Trench Power MOSFET Description The NCEP1214AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.14. Size:357K  ncepower
ncep1580.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1580NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.15. Size:717K  ncepower
ncep11n10aqu.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

 9.16. Size:372K  ncepower
ncep15t14ll.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP15T14LLNCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre

 9.17. Size:379K  ncepower
ncep1520bk.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.18. Size:395K  ncepower
ncep1290ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1290AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1290AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 9.19. Size:409K  ncepower
ncep1216as.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1216ASNCE N-Channel Super Trench Power MOSFET Description The NCEP1216AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.20. Size:319K  ncepower
ncep12n10aq.pdf

NCEP13N10AS
NCEP13N10AS

NCEP12N10AQhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V

 9.21. Size:339K  ncepower
ncep12t12d.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.22. Size:729K  ncepower
ncep10n12ak.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

 9.23. Size:386K  ncepower
ncep15t14d.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP15T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.24. Size:363K  ncepower
ncep11n10ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 9.25. Size:937K  ncepower
ncep10n12k.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

 9.26. Size:348K  ncepower
ncep12t15.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 9.27. Size:409K  ncepower
ncep1260f.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1260FNCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.28. Size:441K  ncepower
ncep1545k.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1545KNCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.29. Size:333K  ncepower
ncep11n10agu.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

 9.30. Size:294K  ncepower
ncep18n10ar.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 9.31. Size:409K  ncepower
ncep10n12g.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 9.32. Size:668K  ncepower
ncep15p30a.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.comNCEP15P30ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30A uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-30ADS Dswitching performance. Both conduction and switching power R =83m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo

 9.33. Size:343K  ncepower
ncep12t12.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP12T12NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.34. Size:735K  ncepower
ncep18n10ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

 9.35. Size:349K  ncepower
ncep12n12k.pdf

NCEP13N10AS
NCEP13N10AS

NCEP12N12KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination

 9.36. Size:427K  ncepower
ncep1212as.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1212ASNCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.37. Size:417K  ncepower
ncep10n12.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 9.38. Size:347K  ncepower
ncep12t18.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP12T18NCE N-Channel Super Trench Power MOSFET Description The NCEP12T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.39. Size:316K  ncepower
ncep1570 ncep1570d.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.40. Size:501K  ncepower
ncep1250ak.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1250AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1250AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.41. Size:680K  ncepower
ncep15t10v.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP15T10VNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP15T10V uses Super Trench technology that isV =150V,I =100ADS Duniquely optimized to provide the most efficient highR =5.7m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 9.42. Size:326K  ncepower
ncep18n10aq.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 9.43. Size:874K  ncepower
ncep18n10ag.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

 9.44. Size:328K  ncepower
ncep12t10f.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP12T10FNCE N-Channel Super Trench Power MOSFET Description The NCEP12T10F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.45. Size:316K  ncepower
ncep1570d.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.46. Size:354K  ncepower
ncep15t14.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP15T14NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f

 9.47. Size:394K  ncepower
ncep12n12ak.pdf

NCEP13N10AS
NCEP13N10AS

NCEP12N12AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini

 9.48. Size:620K  ncepower
ncep15p30ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.comNCEP15P30AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-29.5ADS Dswitching performance. Both conduction and switching power R =90m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

 9.49. Size:358K  ncepower
ncep12n12as.pdf

NCEP13N10AS
NCEP13N10AS

NCEP12N12ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi

 9.50. Size:417K  ncepower
ncep10n12d.pdf

NCEP13N10AS
NCEP13N10AS

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 9.51. Size:707K  ncepower
ncep1575gu.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1575GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1575GU uses Super Trench technology that isV =150V,I =75ADS Duniquely optimized to provide the most efficient highR =13m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching p

 9.52. Size:349K  ncepower
ncep1520.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1520NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.53. Size:302K  ncepower
ncep12n12.pdf

NCEP13N10AS
NCEP13N10AS

NCEP12N12NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

 9.54. Size:447K  ncepower
ncep1545g.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1545GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow

 9.55. Size:335K  ncepower
ncep16n85ak.pdf

NCEP13N10AS
NCEP13N10AS

NCEP16N85AKhttp://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency

 9.56. Size:316K  ncepower
ncep1570.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.57. Size:419K  ncepower
ncep1520ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1520AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.58. Size:329K  ncepower
ncep10n85ag.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP10N85AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss

 9.59. Size:333K  ncepower
ncep11n12agu.pdf

NCEP13N10AS
NCEP13N10AS

NCEP11N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =57A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m , typical@ VGS=4.5V losses are mi

 9.60. Size:987K  ncepower
ncep1570gu.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 9.61. Size:699K  ncepower
ncep1545a.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1545ANCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =22m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =28m (typical) @ V =4.5VDS(ON) GSswitching power losses ar

 9.62. Size:802K  ncepower
ncep15t18t.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP15T18TNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =180ADS Dswitching performance. Both conduction and switching power R =4.45m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 9.63. Size:741K  ncepower
ncep1545ak.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP1545AKNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =26m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =30m (typical) @ V =4.5VDS(ON) GSswitching power losses a

 9.64. Size:2049K  ncepower
ncep15t14t.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP15T14TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP15T14T uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchi

 9.65. Size:727K  ncepower
ncep15t26ll.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP15T26LLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =255ADS Dswitching performance. Both conduction and switching power R =4.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 9.66. Size:340K  ncepower
ncep12t13a.pdf

NCEP13N10AS
NCEP13N10AS

http://www.ncepower.com NCEP12T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 9.67. Size:391K  ncepower
ncep1520k.pdf

NCEP13N10AS
NCEP13N10AS

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
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