NCEP1545AG Todos los transistores

 

NCEP1545AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP1545AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 26.6 nC
   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 171 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEP1545AG Datasheet (PDF)

 ..1. Size:426K  ncepower
ncep1545ag.pdf

NCEP1545AG
NCEP1545AG

http://www.ncepower.com NCEP1545AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

 5.1. Size:699K  ncepower
ncep1545a.pdf

NCEP1545AG
NCEP1545AG

http://www.ncepower.com NCEP1545ANCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =22m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =28m (typical) @ V =4.5VDS(ON) GSswitching power losses ar

 5.2. Size:741K  ncepower
ncep1545ak.pdf

NCEP1545AG
NCEP1545AG

http://www.ncepower.com NCEP1545AKNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =26m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =30m (typical) @ V =4.5VDS(ON) GSswitching power losses a

 6.1. Size:441K  ncepower
ncep1545k.pdf

NCEP1545AG
NCEP1545AG

Pb Free Producthttp://www.ncepower.com NCEP1545KNCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.2. Size:447K  ncepower
ncep1545g.pdf

NCEP1545AG
NCEP1545AG

http://www.ncepower.com NCEP1545GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow

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