NCEP1545AG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1545AG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 171 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: DFN5X6-8L
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NCEP1545AG datasheet
ncep1545ag.pdf
http //www.ncepower.com NCEP1545AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi
ncep1545a.pdf
http //www.ncepower.com NCEP1545A NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =22m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =28m (typical) @ V =4.5V DS(ON) GS switching power losses ar
ncep1545ak.pdf
http //www.ncepower.com NCEP1545AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =26m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =30m (typical) @ V =4.5V DS(ON) GS switching power losses a
ncep1545k.pdf
Pb Free Product http //www.ncepower.com NCEP1545K NCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Otros transistores... NCEP12T15, NCEP12T18, NCEP13N10AS, NCEP1505S, NCEP1520AK, NCEP1520BK, NCEP1520G, NCEP1545A, AO4468, NCEP1545AK, NCEP1570GU, NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK, NCEP15T10V
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