NCEP1580GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP1580GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.8 nS

Cossⓘ - Capacitancia de salida: 289 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm

Encapsulados: DFN5X6-8L

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NCEP1580GU datasheet

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NCEP1580GU

http //www.ncepower.com NCEP1580GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1580GU uses Super Trench technology that is V =150V,I =80A DS D uniquely optimized to provide the most efficient high R =12.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

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NCEP1580GU

http //www.ncepower.com NCEP1580D NCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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NCEP1580GU

http //www.ncepower.com NCEP1580F NCE N-Channel Super Trench Power MOSFET Description The NCEP1580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching

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NCEP1580GU

http //www.ncepower.com NCEP1580 NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

MOSTRAR MÁS

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