NCEP1580GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1580GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 289 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEP1580GU
NCEP1580GU Datasheet (PDF)
ncep1580gu.pdf
http://www.ncepower.com NCEP1580GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1580GU uses Super Trench technology that isV =150V,I =80ADS Duniquely optimized to provide the most efficient highR =12.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1580d.pdf
http://www.ncepower.com NCEP1580DNCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1580f.pdf
http://www.ncepower.com NCEP1580FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP1580F uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching
ncep1580.pdf
http://www.ncepower.com NCEP1580NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918