NCEP15P30A Todos los transistores

 

NCEP15P30A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP15P30A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO220

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NCEP15P30A Datasheet (PDF)

 ..1. Size:668K  ncepower
ncep15p30a.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.comNCEP15P30ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30A uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-30ADS Dswitching performance. Both conduction and switching power R =83m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo

 0.1. Size:620K  ncepower
ncep15p30ak.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.comNCEP15P30AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-29.5ADS Dswitching performance. Both conduction and switching power R =90m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

 8.1. Size:387K  1
ncep1520k.pdf

NCEP15P30A
NCEP15P30A

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.2. Size:1260K  ncepower
ncep1580gu.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1580GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1580GU uses Super Trench technology that isV =150V,I =80ADS Duniquely optimized to provide the most efficient highR =12.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 8.3. Size:347K  ncepower
ncep1505s.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1505SNCE N-Channel Super Trench Power MOSFET Description The NCEP1505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.4. Size:532K  ncepower
ncep1580d.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1580DNCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.5. Size:349K  ncepower
ncep1520g.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 8.6. Size:426K  ncepower
ncep1545ag.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1545AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

 8.7. Size:812K  ncepower
ncep1580f.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1580FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP1580F uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching

 8.8. Size:357K  ncepower
ncep1580.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1580NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 8.9. Size:372K  ncepower
ncep15t14ll.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP15T14LLNCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre

 8.10. Size:379K  ncepower
ncep1520bk.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.11. Size:386K  ncepower
ncep15t14d.pdf

NCEP15P30A
NCEP15P30A

Pb Free Producthttp://www.ncepower.com NCEP15T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.12. Size:441K  ncepower
ncep1545k.pdf

NCEP15P30A
NCEP15P30A

Pb Free Producthttp://www.ncepower.com NCEP1545KNCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.13. Size:316K  ncepower
ncep1570 ncep1570d.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 8.14. Size:680K  ncepower
ncep15t10v.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP15T10VNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP15T10V uses Super Trench technology that isV =150V,I =100ADS Duniquely optimized to provide the most efficient highR =5.7m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 8.15. Size:316K  ncepower
ncep1570d.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 8.16. Size:354K  ncepower
ncep15t14.pdf

NCEP15P30A
NCEP15P30A

Pb Free Producthttp://www.ncepower.com NCEP15T14NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f

 8.17. Size:707K  ncepower
ncep1575gu.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1575GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1575GU uses Super Trench technology that isV =150V,I =75ADS Duniquely optimized to provide the most efficient highR =13m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching p

 8.18. Size:349K  ncepower
ncep1520.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1520NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 8.19. Size:447K  ncepower
ncep1545g.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1545GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow

 8.20. Size:316K  ncepower
ncep1570.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 8.21. Size:419K  ncepower
ncep1520ak.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1520AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.22. Size:987K  ncepower
ncep1570gu.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 8.23. Size:699K  ncepower
ncep1545a.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1545ANCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =22m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =28m (typical) @ V =4.5VDS(ON) GSswitching power losses ar

 8.24. Size:802K  ncepower
ncep15t18t.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP15T18TNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =180ADS Dswitching performance. Both conduction and switching power R =4.45m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 8.25. Size:741K  ncepower
ncep1545ak.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP1545AKNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =26m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =30m (typical) @ V =4.5VDS(ON) GSswitching power losses a

 8.26. Size:2049K  ncepower
ncep15t14t.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP15T14TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP15T14T uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchi

 8.27. Size:727K  ncepower
ncep15t26ll.pdf

NCEP15P30A
NCEP15P30A

http://www.ncepower.com NCEP15T26LLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =255ADS Dswitching performance. Both conduction and switching power R =4.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 8.28. Size:391K  ncepower
ncep1520k.pdf

NCEP15P30A
NCEP15P30A

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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