NCEP4075GU Datasheet. Equivalente

 ..1. Size:682K  ncepower
 ncep4075gu.pdf

http //www.ncepower.com NCEP4075GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4075GU uses Super Trench technology that is V =40V,I =75A DS D uniquely optimized to provide the most efficient high R =4.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =6.1m (typical) @ V =4.5V DS(ON) GS switching power los

 6.1. Size:685K  ncepower
 ncep4075agu.pdf

http //www.ncepower.com NCEP4075AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP4075AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =75A DS D frequency switching performance. Both conduction and R =5.1m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low

 8.1. Size:732K  ncepower
 ncep40t20agu.pdf

Pb Free Product http //www.ncepower.com NCEP40T20AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20AGU uses Super Trench technology that General Features is uniquely optimized to provide the most efficient high V =40V,I =200A DS D frequency switching performance. Both conduction and R =0.95m , typical @ V =10V DS(ON) GS switching power losses are minimized d

 8.2. Size:839K  ncepower
 ncep4045gu.pdf

http //www.ncepower.com NCEP4045GU NCE N-Channel Super Trench Power MOSFET Description The NCEP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

 8.3. Size:504K  ncepower
 ncep40p80d.pdf

http //www.ncepower.com NCEP40P80D NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.4. Size:326K  ncepower
 ncep40t15a.pdf

Pb Free Product http //www.ncepower.com NCEP40T15A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.5. Size:1285K  ncepower
 ncep40t35avd.pdf

http //www.ncepower.com NCEP40T35AVD NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.68m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c

 8.6. Size:826K  ncepower
 ncep40p65gu.pdf

http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

 8.7. Size:363K  ncepower
 ncep40t17g.pdf

Pb Free Product http //www.ncepower.com NCEP40T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.8. Size:303K  ncepower
 ncep40t13agu.pdf

http //www.ncepower.com NCEP40T13AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T13AGU uses Super Trench technology that is VDS =40V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.8m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching po

 8.9. Size:343K  ncepower
 ncep40t11.pdf

http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 8.10. Size:351K  ncepower
 ncep40t14g.pdf

http //www.ncepower.com NCEP40T14G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T14G uses Super Trench technology that is VDS =40V,ID =140A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.6m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.3m (typical) @ VGS=4.5V losses are m

 8.11. Size:498K  ncepower
 ncep40pt15d.pdf

http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.12. Size:542K  ncepower
 ncep40pt15g.pdf

http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS

 8.13. Size:661K  ncepower
 ncep40p60k.pdf

http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

 8.14. Size:378K  ncepower
 ncep40p80k.pdf

Pb Free Product http //www.ncepower.com NCEP40P80K NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.15. Size:301K  ncepower
 ncep40t12agu.pdf

Pb Free Product http //www.ncepower.com NCEP40T12AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T12AGU uses Super Trench technology that is VDS =40V,ID =120A uniquely optimized to provide the most efficient high RDS(ON)=2.05m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(F

 8.16. Size:692K  ncepower
 ncep40t19gu.pdf

http //www.ncepower.com NCEP40T19GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T19GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit

 8.17. Size:400K  ncepower
 ncep4085eg.pdf

http //www.ncepower.com NCEP4085EG NCE N-Channel Super Trench Power MOSFET Description The NCEP4085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.18. Size:300K  ncepower
 ncep4065qu.pdf

http //www.ncepower.com NCEP4065QU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse

 8.19. Size:657K  ncepower
 ncep40pt13gu.pdf

http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON

 8.20. Size:1008K  ncepower
 ncep40t15gu.pdf

NCEP40T15GU http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET General Features Description V =40V,I =150A DS D The NCEP40T15GU uses Super Trench technology that is uniquely R =1.09m , typical@ V =10V DS(ON) GS optimized to provide the most efficient high frequency switching R =1.5m , typical@ V =4.5V DS(ON) GS performance. Both conduction and switching power l

 8.21. Size:354K  ncepower
 ncep4090agu.pdf

http //www.ncepower.com NCEP4090AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4090AGU uses Super Trench technology that is VDS =40V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.9m (typical) @ VGS=10V frequency switching performance. Both conduction and switching power losses are minimized due to an extremely l

 8.22. Size:734K  ncepower
 ncep40t20all.pdf

Pb Free Product http //www.ncepower.com NCEP40T20ALL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =250A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimiz

 8.23. Size:726K  ncepower
 ncep40t16ll.pdf

http //www.ncepower.com NCEP40T16LL NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =40V,I =160A DS D uniquely optimized to provide the most efficient high frequency R =1.35m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.85m , typical @ V =4.5V DS

 8.24. Size:624K  ncepower
 ncep40pt13d.pdf

http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)

 8.25. Size:335K  ncepower
 ncep40p80g.pdf

http //www.ncepower.com NCEP40P80G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P80G uses Super Trench technology that is VDS =-40V,ID =-80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=9.0m (typical) @ VGS=-4.5V

 8.26. Size:653K  ncepower
 ncep40pt12k.pdf

http //www.ncepower.com NCEP40PT12K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120A DS D uniquely optimized to provide the most efficient high frequency R =4.55m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =7.0m (typical) @ V =-4.5V DS(ON)

 8.27. Size:577K  ncepower
 ncep40t35all.pdf

http //www.ncepower.com NCEP40T35ALL NCE N-Channel Super Trench Power MOSFET Description The NCEP40T35ALL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =350A DS D frequency switching performance. Both conduction and R =0.63m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely

 8.28. Size:325K  ncepower
 ncep40t17a.pdf

Pb Free Product http //www.ncepower.com NCEP40T17A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.29. Size:933K  ncepower
 ncep40p65qu.pdf

http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

 8.30. Size:374K  ncepower
 ncep40p07s.pdf

http //www.ncepower.com NCEP40P07S NCE P-Channel Super Trench Power MOSFET Description The NCEP40P07S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.31. Size:300K  ncepower
 ncep40t12gu.pdf

http //www.ncepower.com NCEP40T12GU NCE N-Channel Super Trench Power MOSFET General Features Description VDS =40V,ID =120A The NCEP40T12GU uses Super Trench technology that is RDS(ON)=2.05m (typical) @ VGS=10V uniquely optimized to provide the most efficient high RDS(ON)=3.1m (typical) @ VGS=4.5V frequency switching performance. Both conduction and Excellent gat

 8.32. Size:844K  ncepower
 ncep40t15agu.pdf

http //www.ncepower.com NCEP40T15AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =150A DS D switching performance. Both conduction and switching power R =1.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely

 8.33. Size:755K  ncepower
 ncep40t15ak.pdf

http //www.ncepower.com NCEP40T15AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T15AK uses Super Trench technology that is V =40V,I =150A DS D uniquely optimized to provide the most efficient high frequency R =1.9m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM)

 8.34. Size:759K  ncepower
 ncep40p60g.pdf

http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

 8.35. Size:1020K  ncepower
 ncep4090gu.pdf

Pb Free Product http //www.ncepower.com NCEP4090GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4090GU uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5V DS(ON) GS sw

 8.36. Size:345K  ncepower
 ncep4060eq.pdf

Pb Free Product http //www.ncepower.com NCEP4060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.37. Size:626K  ncepower
 ncep40p60q.pdf

http //www.ncepower.com NCEP40P60Q NCE P-Channel Super Trench Power MOSFET Description The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-40V,I =-60A DS D switching performance. Both conduction and switching power R =8.8m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely lo

 8.38. Size:311K  ncepower
 ncep4040q.pdf

Pb Free Product http //www.ncepower.com NCEP4040Q NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4040Q uses Super Trench technology that is VDS =40V,ID =40A uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=11m (typical) @ VGS=4.5V switchi

 8.39. Size:688K  ncepower
 ncep40pt30vd.pdf

http //www.ncepower.com NCEP40PT30VD NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300A DS D uniquely optimized to provide the most efficient high R =1.6m , typical@ V =-10V DS(ON) GS frequency switching performance. Both conduction and R =2.2m , typical@ V =-4.5V DS(ON) GS switching p

 8.40. Size:672K  ncepower
 ncep40t20asl.pdf

http //www.ncepower.com NCEP40T20ASL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =340A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extr

 8.41. Size:1124K  ncepower
 ncep40t11ak.pdf

Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 8.42. Size:778K  ncepower
 ncep40t20gu.pdf

http //www.ncepower.com NCEP40T20GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc

 8.43. Size:1132K  ncepower
 ncep40t17ad.pdf

Pb Free Product http //www.ncepower.com NCEP40T17AD NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 8.44. Size:656K  ncepower
 ncep40p35gu.pdf

http //www.ncepower.com NCEP40P35GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35A DS D uniquely optimized to provide the most efficient high frequency R =19.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =28.0m (typical) @ V =-4.5V DS(ON)

 8.45. Size:654K  ncepower
 ncep40p30k.pdf

http //www.ncepower.com NCEP40P30K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30K uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =22.5m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =31.5m (typical) @ V =-4.5V DS(ON) G

 8.46. Size:763K  ncepower
 ncep40t11k.pdf

http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

 8.47. Size:535K  ncepower
 ncep40t20a.pdf

http //www.ncepower.com NCEP40T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

 8.48. Size:381K  ncepower
 ncep40t15g.pdf

http //www.ncepower.com NCEP40T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.49. Size:331K  ncepower
 ncep40t11ag.pdf

Pb Free Product http //www.ncepower.com NCEP40T11AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.50. Size:719K  ncepower
 ncep40p30q.pdf

http //www.ncepower.com NCEP40P30Q NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =21.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =32.0m (typical) @ V =-4.5V DS(ON) G

 8.51. Size:303K  ncepower
 ncep40t17at.pdf

Pb Free Product http //www.ncepower.com NCEP40T17AT NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.52. Size:375K  ncepower
 ncep40t11g.pdf

Pb Free Product http //www.ncepower.com NCEP40T11G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.53. Size:302K  ncepower
 ncep40nd80g.pdf

http //www.ncepower.com NCEP40ND80G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40ND80G uses Super Trench technology that is VDS =40V,ID =80A uniquely optimized to provide the most efficient high RDS(ON)=4.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.5m (typical) @ VGS=4.5V switching power losses are

 8.54. Size:367K  ncepower
 ncep40t17ag.pdf

http //www.ncepower.com NCEP40T17AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.55. Size:338K  ncepower
 ncep40t13gu.pdf

Pb Free Product http //www.ncepower.com NCEP40T13GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T13GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.56. Size:737K  ncepower
 ncep40t14a.pdf

NCEP40T14A http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP40T14A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequency switchi