NCEP40P30Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP40P30Q
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 18.5 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: PDFN3.3X3.3-8L

Búsqueda de reemplazo de MOSFET NCEP40P30Q

NCEP40P30Q Datasheet (PDF)

..1. Size:719K ncepower
ncep40p30q.pdf

http://www.ncepower.com NCEP40P30QNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =21.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =32.0m (typical) @ V =-4.5VDS(ON) G

5.1. Size:654K ncepower
ncep40p30k.pdf

http://www.ncepower.com NCEP40P30KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30K uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =22.5m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =31.5m (typical) @ V =-4.5VDS(ON) G

6.1. Size:656K ncepower
ncep40p35gu.pdf

http://www.ncepower.com NCEP40P35GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35ADS Duniquely optimized to provide the most efficient high frequencyR =19.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =28.0m (typical) @ V =-4.5VDS(ON)

7.1. Size:504K ncepower
ncep40p80d.pdf

http://www.ncepower.com NCEP40P80DNCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

7.2. Size:826K ncepower
ncep40p65gu.pdf

http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

7.3. Size:498K ncepower
ncep40pt15d.pdf

http://www.ncepower.com NCEP40PT15DNCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

7.4. Size:542K ncepower
ncep40pt15g.pdf

http://www.ncepower.com NCEP40PT15GNCE P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5VDS(ON) GS

7.5. Size:661K ncepower
ncep40p60k.pdf

http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

7.6. Size:378K ncepower
ncep40p80k.pdf

Pb Free Producthttp://www.ncepower.com NCEP40P80KNCE P-Channel Super Trench Power MOSFET Description The NCEP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

7.7. Size:657K ncepower
ncep40pt13gu.pdf

http://www.ncepower.com NCEP40PT13GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.2m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.8m (typical) @ V =-4.5VDS(ON

7.8. Size:624K ncepower
ncep40pt13d.pdf

http://www.ncepower.com NCEP40PT13DNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.85m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =5.0m (typical) @ V =-4.5VDS(ON)

7.9. Size:335K ncepower
ncep40p80g.pdf

http://www.ncepower.com NCEP40P80GNCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P80G uses Super Trench technology that is VDS =-40V,ID =-80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=9.0m (typical) @ VGS=-4.5V

7.10. Size:653K ncepower
ncep40pt12k.pdf

http://www.ncepower.com NCEP40PT12KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120ADS Duniquely optimized to provide the most efficient high frequencyR =4.55m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.0m (typical) @ V =-4.5VDS(ON)

7.11. Size:933K ncepower
ncep40p65qu.pdf

http://www.ncepower.comNCEP40P65QUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)

7.12. Size:374K ncepower
ncep40p07s.pdf

http://www.ncepower.com NCEP40P07SNCE P-Channel Super Trench Power MOSFET Description The NCEP40P07S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

7.13. Size:759K ncepower
ncep40p60g.pdf

http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G

7.14. Size:626K ncepower
ncep40p60q.pdf

http://www.ncepower.comNCEP40P60QNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP40P60Q uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-40V,I =-60ADS Dswitching performance. Both conduction and switching power R =8.8m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo

7.15. Size:688K ncepower
ncep40pt30vd.pdf

http://www.ncepower.comNCEP40PT30VDNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300ADS Duniquely optimized to provide the most efficient highR =1.6m , typical@ V =-10VDS(ON) GSfrequency switching performance. Both conduction andR =2.2m , typical@ V =-4.5VDS(ON) GSswitching p

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