NCEP40P30Q Todos los transistores

 

NCEP40P30Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP40P30Q
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: PDFN3.3X3.3-8L
     - Selección de transistores por parámetros

 

NCEP40P30Q Datasheet (PDF)

 ..1. Size:719K  ncepower
ncep40p30q.pdf pdf_icon

NCEP40P30Q

http://www.ncepower.com NCEP40P30QNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =21.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =32.0m (typical) @ V =-4.5VDS(ON) G

 5.1. Size:654K  ncepower
ncep40p30k.pdf pdf_icon

NCEP40P30Q

http://www.ncepower.com NCEP40P30KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30K uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =22.5m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =31.5m (typical) @ V =-4.5VDS(ON) G

 6.1. Size:656K  ncepower
ncep40p35gu.pdf pdf_icon

NCEP40P30Q

http://www.ncepower.com NCEP40P35GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35ADS Duniquely optimized to provide the most efficient high frequencyR =19.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =28.0m (typical) @ V =-4.5VDS(ON)

 7.1. Size:504K  ncepower
ncep40p80d.pdf pdf_icon

NCEP40P30Q

http://www.ncepower.com NCEP40P80DNCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS4020AP | 2N7075

 

 
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