NCEP40P60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40P60K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 110 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 39 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 660 pF
Resistencia entre drenaje y fuente RDS(on): 0.017 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET NCEP40P60K
NCEP40P60K Datasheet (PDF)
ncep40p60k.pdf
http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p60g.pdf
http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p60q.pdf
http://www.ncepower.comNCEP40P60QNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP40P60Q uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-40V,I =-60ADS Dswitching performance. Both conduction and switching power R =8.8m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo
ncep40p65gu.pdf
http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)
ncep40p65qu.pdf
http://www.ncepower.comNCEP40P65QUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
