NCEP40P60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40P60K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO-252

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NCEP40P60K datasheet

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NCEP40P60K

http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

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 ncep40p60g.pdf pdf_icon

NCEP40P60K

http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

 5.2. Size:626K  ncepower
 ncep40p60q.pdf pdf_icon

NCEP40P60K

http //www.ncepower.com NCEP40P60Q NCE P-Channel Super Trench Power MOSFET Description The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-40V,I =-60A DS D switching performance. Both conduction and switching power R =8.8m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely lo

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 ncep40p65gu.pdf pdf_icon

NCEP40P60K

http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

MOSTRAR MÁS

Otros transistores... NCEP4085EG, NCEP4090AGU, NCEP4090GU, NCEP40P07S, NCEP40P30K, NCEP40P30Q, NCEP40P35GU, NCEP40P60G, AON6380, NCEP40P60Q, NCEP40P65GU, NCEP40P65QU, NCEP40P80G, NCEP40PT12K, NCEP40PT13D, NCEP40PT13GU, NCEP40PT15G